Branche Benefits
  • Solmates
  • Solmates
  • Solmates
  • Solmates
  • Solmates
  • Solmates


Publications Solmates

Publications

Highly Oriented Growth of Piezoelectric Thin Films on Silicon Using Two-Dimensional Nanosheets as Growth Template Layer

Minh D. Nguyen,Huiyu Yuan, Evert P. Houwman, Matthijn Dekkers, Gertjan Koster, Johan E. ten Elshof, and Guus Rijnders
ACS Appl. Mater. Interfaces, Article ASAP, Publication Date (Web): October 26, 2016 (2016)

Ca2Nb3O10 (CNOns) and Ti0.87O2 (TiOns) metal oxide nanosheets (ns) are used as a buffer layer for epitaxial growth of piezoelectric capacitor stacks on Si and Pt/Ti/SiO2/Si (Pt/Si) substrates. Highly (001)- and (110)-oriented Pulsed Laser Deposited PZT films are achieved by utilizing CNOns and TiOns, respectively. The devices grown on nanosheets/Pt/Si show significantly improved polarization fatigue properties over those of similar devices grown directly on Pt/Si. The differences in properties are ascribed to differences in the crystalline structures and the density of the films. These results show a route toward the fabrication of single crystal piezoelectric thin films and devices with high quality, long-lifetime piezoelectric capacitor structures on nonperovskite and even noncrystalline substrates such as glass or polished metal surfaces

To read the full article, click here.

 


 

Enhanced energy storage density and energy efficiency of epitaxial PLZT (Pb0.9La0.1(Zr0.52Ti0.48)O3) relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

Minh D.Nguyen, Chi T. Q.Nguyen, Evert P.Houwman, Hung N.Vu, Matthijn Dekkers and Guus Rijnders
APL MATERIALS 4, 080701 (2016)

PLZT relaxor-ferroelectric thin films were grown on SrRuO/SrTiO/Si substrates by pulsed laser deposition. A large recoverable storage density (Ureco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial (PZT) lead zirconate titanate ferroelectric thin films (Ureco= 9.2 J/cm3 and η = 56.4%) which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

To read the full article, click here.

 


 

Stress-optic modulator in TriPleX platform using a Piezoelectric lead zirconate titanate (PZT) thin film

Naser Hosseini, Ronald Dekker, Marcel Hoekman, Matthijn Dekkers, Jan Bos, Arne Leinse, and Rene Heideman
Optics Express, Vol. 23, Issue 11, (2015) pp. 14018-14026

We will demonstrate a stress-optic phase modulator in the passive SiN-based TriPleX platform using a layer of piezoelectric material. Regarding the stress-optic effect, the piezoelectric layer deposited on top of an optical waveguide is employed to control the phase of propagating light in the structure by applying an electrical field across the layer. In this work, it is demonstrated that the stress-optic effect lowers the power consumption by a factor of one million for quasi-DC operation and increases the modulation speed by three orders of magnitude, compared to currently used thermo-optic modulation in the TriPleX platform.

To read the full article, click here.

 



Integration of a Piezoelectric Layer on Si FinFETs for Tunable Strained Device Applications

Buket Kaleli, Raymond J. E. Hueting, Minh D. Nguyen, and Rob A. M. Wolters
IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 61, NO. 6, (2014)

Earlier theoretical reports predicted that the usage of a piezoelectric stressor layer around the FinFET, i.e., the PiezoFET, offers a great potential for steep subthreshold slope devices. For the first time, we analyzed the practical realization of such PiezoFETs comprising a piezoelectric stressor layer, lead–zirconate–titanate (PZT), and aluminum–nitride (AlN) deposited on n-type silicon FinFETs. A high-piezoelectric response in the range of 100 pm/V has been obtained for the PZT PiezoFET evidencing the converse piezoelectric effect in the device. The piezoelectric response for the AlN device was much less (13 pm/V) as expected. Underlying device properties, such as subthreshold swing (SS) and low-field electron mobility have been significantly affected by the presence of the PZT stressor. A 20%–50% change in the mobility and a change in the SS (about 5 mV/decade) have been observed. The change can be attributed to the strain induced reduction of the interface trap density at the Si/SiO2 interface. This strain is partly formed by the bias over the piezoelectric layer, which indicates the converse piezoelectric effect related tunable strain in both the silicon channel and gate oxide.

To read the full article, click here.

 



Pulsed-laser deposited Pb(Zr0.52,Ti0.48)O3-on-silicon resonators with high-stopband rejection using feed-through cancellation

Yagubizade, H. , Darvishi, M. , Chen, Y.Y. ,  Nguyen, M.D. , Dekkers, J.M. , Wiegerink, R.J. , Elwenspoek, M.C. and  Tas, N.R.
Appl. Phys. Lett, 102 (6). (2013) 063509

A length extensional mode lead zirconate titanate (PZT)-on-Si resonator is presented using 50 Ohm termination with high-stopband rejection exploiting feed-through cancellation. A 250 nm-thick (100)-dominant oriented PZT thin-lm deposited on top of 3 μm Si using pulsed laser deposition (PLD) has been employed. The resonator is presented with the length of 40 μm (half-wavelength), which corresponds to a resonance frequency of about 83 MHz. The effect of feed-through cancellation has been studied to obtain high-stopband rejection using bottom electrode patterning in the presence of a specific grounding resistance. Using this technique, the stopband rejection can be improved by more than 20 dB.

To read the full article, click here. A white paper on this topic is available here.

 



Lead-free (K0.5Na0.5)NbO3 thin films by pulsed laser deposition driving MEMS-based piezoelectric cantilevers

Minh D. Nguyen, Matthijn Dekkers, Evert P. Houwman, Hien T. Vuc, Hung N. Vuc, Guus Rijnders
Materials Letters, 164 (2016), Pages 413–416.

Thin film capacitors of the lead-free (K0.5Na0.5)NbO3 (KNN) with (100) orientation were grown on Pt/Ti/SiO2/SOI (silicon-on-insulator) substrates by pulsed laser deposition. The films are pure phases and do not show other crystal orientations. The remnant polarization Pr, saturation polarization Psat, longitudinal d33,f and transverse (d31,f and e31,f) piezoelectric coefficients of the KNN films were determined (Pr=12.6 µC/cm2, Psat=25.0 µC/cm2, d33,f=58 pm/V, d31,f=−42 pm/V and e31,f=−5.6 C/m2). These values are well comparable with the highest values reported for lead-free films of different compositions and therefore these KNN films form a potential alternative to PZT films in lead-free MEMS applications.

To read the full article, click here

 



Pulsed laser deposition in Twente: from research tool towards industrial deposition

Dave H.A. Blank,  Matthijn Dekkers and Guus Rijnders
J. Phys. D: Appl. Phys. 47 (2014) 034006

To read the full article, click here.



Epitaxial Pb(Mg1/3Nb2/3)O3-PbTiO3 (67/33) thin films with large tunable self-bias field controlled by a PbZr1xTixO3 interfacial layer

M. Boota, E. P. Houwman, M. Dekkers, M. Nguyen, and G. Rijnders
Appl. Phys. Lett., 104, (2014) 182909

To read the full article, click here.



Effect of dopants on ferroelectric and piezoelectric properties of lead zirconate titanate thin films on Si substrates.

Nguyen, Minh D.  and Trinh, Thong Q. and  Dekkers, Matthijn  and  Houwman, Evert P.  and Vu, Hung Ngoc and  Rijnders, Guus 
Ceramics international, 40 (1, pt. A). (2014) 1013 - 1018

To read the full article, click here.



A Fast Room-Temperature Poling Process of Piezoelectric Pb(Zr0.45Ti0.55)O3 Thin Films

Minh Duc Nguyen, Evert Houwman, Matthijn Dekkers, Hung Ngoc Vu, and Guus Rijnders
Sci. Adv. Mater., Vol. 6, No. 2 (2014), 1947-2935

To read the full article, click here.



Enhanced piezoelectric properties of (110)-oriented PbZr12xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

Wan, X. and Houwman, E.P.  and Steenwelle, R.J.A.  and Schaijk, R. van and  Nguyen, M.D. and Dekkers, J.M.  and  Rijnders, A.J.H.M. 
Appl. Phys. Lett, 104. (2014) 092902

To read the full article, click here.



Analysis of thin-film PZT/LNO stacks on an encapsulated TiN electrode

B. Kaleli, M.D. Nguyen, J. Schmitz, R.A.M. Wolters, R.J.E. Hueting
Microelectronic Engineering 119 (2014) 16–19

To read the full article, click here.



Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial Pb(Zr0.45Ti0.55)O3 thin films on silicon in relation to grain tilt

Evert P Houwman, Minh D Nguyen, Matthijn Dekkers and Guus Rijnders
Sci. Technol. Adv. Mater. 14 (2013) 045006

To read the full article, click here.



The significance of the piezoelectric coefficient d31,eff determined from cantilever structures

M Dekkers, H Boschker, M van Zalk, M Nguyen, H Nazeer, E Houwman and G Rijnders
J. Micromech. Microeng. 23 (2013) 025008

To read the full article, click here



Film-thickness and composition dependence of epitaxial thin-film PZT-based mass-sensors

Minh Duc Nguyena, Matthijn Dekkers, Hung Ngoc Vu, Guus Rijnders
Sensors and Actuators A 199 (2013) 98– 105

To read the full article, click here.



Influence of configuration and microstructure on performance of La2NiO4+d intermediate-temperature solid oxide fuel cells cathodes

Nicolas Hildenbrand, Pieter Nammensma, Dave H.A. Blank, Henny J.M. Bouwmeester, Bernard A. Boukamp
Journal of Power Sources 238 (2013) 442-453

To read the full article, click here.



Optimized electrode coverage of membrane actuators based on epitaxial PZT thin films

M D Nguyen, H Nazeer, M Dekkers, D H A Blank and G Rijnders
Smart Mater. Struct. 22 (2013) 085013

To read the full article, click here.



Pulsed laser deposited-PZT based MEMS energy harvesting devices

Jambunathan, M;. Elfrink, R.;. Vullers, R.; van Schaijk, R.; Dekkers, M.; Broekmaat, J.
IEEE 10.1109/ISAF.2012.6297807

To read the full article, click here.



Determination of the Young’s modulus of pulsed laser deposited epitaxial PZT thin films

H Nazeer, M D Nguyen, L A Woldering, L Abelmann, G Rijnders and M C Elwenspoek
J. Micromech. Microeng. 21 (2011) 074008

To read the full article, click here.



Misfit strain dependence of ferroelectric and piezoelectric properties of clamped (001) epitaxial Pb(Zr0.52,Ti0.48)O3 thin films

Minh D. Nguyen, Matthijn Dekkers, Evert Houwman, Ruud Steenwelle, Xin Wan et al.
Appl. Phys. Lett. 99, 252904 (2011);

To read the full article, click here.



Improved cathode/electrolyte interface of SOFC

Nicolas Hildenbrand, Bernard A. Boukamp, Pieter Nammensma, Dave H.A. Blank
Solid State Ionics 192 (2011) 12–15

To read the full article, click here.



Characterization of epitaxial Pb(Zr,Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers

M D Nguyen, H Nazeer, K Karakaya, S V Pham, R Steenwelle, M Dekkers, L Abelmann, D H A Blank and G Rijnders
J. Micromech. Microeng. 20 (2010) 085022

To read the full article, click here.



Ferroelectric properties of epitaxial Pb(Zr,Ti)O3 thin films on silicon by control of crystal orientation

Matthijn Dekkers, Minh D. Nguyen, Ruud Steenwelle, Paul M. te Riele, Dave H. A. Blank, and Guus Rijnders
Appl. Phys. Lett. 95, (2009) 012902

To read the full article, click here.



ZnIr2O4, a p-type transparent oxide semiconductor in the class of spinel zinc-d6-transition metal oxide

Matthijn Dekkers, Guus Rijnders, and Dave H. A. Blank
Appl. Phys. Lett. 90, (2007) 021903

To read the full article, click here.



Role of Sn doping in In2O3 thin films on polymer substrates by pulsed laser deposition at room temperature

Matthijn Dekkers, Guus Rijnders, and Dave H. A. Blank
Appl. Phys. Lett., 88, (2006).15

To read the full article, click here.

 



Pulsed-laser deposited Pb(Zr0.52,Ti0.48)O3-on-silicon resonators with high-stopband rejection using feed-through cancellation

Yagubizade, H. , Darvishi, M. , Chen, Y.Y. ,  Nguyen, M.D. , Dekkers, J.M. , Wiegerink, R.J. , Elwenspoek, M.C. and  Tas, N.R.
Appl. Phys. Lett, 102 (6). (2013) 063509

A length extensional mode lead zirconate titanate (PZT)-on-Si resonator is presented using 50 Ohm termination with high-stopband rejection exploiting feed-through cancellation. A 250 nm-thick (100)-dominant oriented PZT thin-lm deposited on top of 3 μm Si using pulsed laser deposition (PLD) has been employed. The resonator is presented with the length of 40 μm (half-wavelength), which corresponds to a resonance frequency of about 83 MHz. The effect of feed-through cancellation has been studied to obtain high-stopband rejection using bottom electrode patterning in the presence of a specific grounding resistance. Using this technique, the stopband rejection can be improved by more than 20 dB.

To read the full article, click here. A white paper on this topic is available here.